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Consumables >> Consumables >> GaInP/GaAs/Ge Epitaxial Wafer-30% Triple Junction
The unprocessed Epitaxial Wafers of class 30% contain our high-efficiency GaInP/GaAs/Ge based epitaxial layers on a Ge substrate. These epixial wafers can be used for any further processing and customized cell designs.
Design and Mechanical Data
Substrate Material ：GaInP/GaInAs/Ge on Ge substrate Base Material ：100 mm ±0.20
Thickness ：145 μm ±15 μm or 175 μm ±15 μm
Major Flat length ：32.5 mm ±2 mm
Major Flat orientation：(100) ±2°
Average Weight ：≤ 93 mg/cm2
Laser mark label：Alpha-numeric
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